Comparative Study of Different High Voltage Switches Used in Pulsed High Voltage Application


Sai Kiran Panda
Sabyasachi Mitra
J. Mondal
A. Roy


High-voltage switches play a crucial role in pulsed power applications, where the efficient and reliable control of highvoltage pulses is required. This study aims to compare different types of high-voltage switches commonly used in pulsed power systems including electromechanical switches, vacuum switches, gas-filled switches, triggered spark gaps and solidstate switches. The comparison study focuses on key performance parameters such as voltage handling capability, current carrying capacity, turn-on time, and repetition rates are considered to provide a comprehensive study and analysis of the switch’s suitability for different pulsed power applications. Gas-filled switches such as spark gaps, thyratrons and ignitrons have been used in pulsed power systems due to their high voltage handling capability and low switching losses. However, they suffer from a limited lifetime and require maintenance and periodic replacement. Solid-state switches, i.e. Silicon-Controlled Rectifiers (SCRs), Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) offer advantages in terms of longevity, reliability, and reduced maintenance. However, they have limitations in high-voltage applications and exhibit higher switching losses. The findings of this comparison study will assist researchers, engineers, and system designers in selecting the most appropriate high-voltage switch for pulsed power applications, considering the specific requirements and constraints of the system. This will ultimately contribute to the advancement and optimization of pulsed power technologies across a wide range of scientific, industrial, and strategic applications.


How to Cite
Panda, S. K. ., Mitra, S. ., Mondal, J. ., & Roy, A. . (2024). Comparative Study of Different High Voltage Switches Used in Pulsed High Voltage Application. Power Research - A Journal of CPRI, 19(2), 109–115.


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